 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| White Electronic Designs 64Mx32 Flash Multi-Chip Package 3.0V Page Mode Flash Memory FEATURES Single power supply operation * 3 volt read, erase, and program operations I/O Control * All input levels (address, control, and DQ input levels) and outputs are determined by voltage on VIO input. VIO range is 1.65 to VCC Secured Silicon Sector region * 128-word/256-byte sector for permanent, secure identification through an 8-word/16-byte random Electronic Serial Number, accessible through a command sequence * May be programmed and locked at the factory or by the customer Flexible sector architecture * Five hundred twelve 64 Kword (128 Kbyte) sectors * Two hundred fifty-six 64 Kword (128 Kbyte) sectors * One hundred twenty-eight 64 Kword (128 Kbyte) sectors Compatibility with JEDEC standard * Provides software compatibility for single-power supply flash, and superior inadvertent write protection 100,000 erase cycles per sector typical 20-year data retention typical Software features W764M32V-XSBX ADVANCED* * Program Suspend and Resume: read other sectors before programming operation is completed * Erase Suspend and Resume: read/program other sectors before an erase operation is completed * Data# polling and toggle bits provide status * Unlock Bypass Program command reduces overall multiple-word programming time * CFI (Common Flash Interface) compliant: allows host system to identify and accommodate multiple flash devices Hardware features * Advanced Sector Protection * WP#/ACC input accelerates programming time (when high voltage is applied) for greater throughput during system production. Protects first or last sector regardless of sector protection settings * Hardware reset input (RESET#) resets device * Ready/Busy# output (RY/BY#) detects program or erase cycle completion * This product is under development, is not qualified or characterized and is subject to change or cancellation without notice. PERFORMANCE CHARACTERISTICS High Performance * 100, 120 ns * 8-word/16-byte page read buffer * 25 ns page read times * 16-word/32-byte write buffer reduces overall programming time for multiple-word updates Package option * 107 BGA, 14mm x 17mm * 1.0mm pitch White Electronic Designs Corp. reserves the right to change products or specifications without notice. March 2006 Rev. 2 1 White Electronic Designs Corporation * (602) 437-1520 * www.wedc.com White Electronic Designs GENERAL DESCRIPTION The W764MB2V-XSBX device is a 3.0V single power flash memory. The device utilizes four organized as 33,554,432 words or 67, 108,864 bytes. The device has 64 -bit wide data bus that can also function as an 32-bit wide data bus by using the BYTE# input. The device can be programmed either in the host system or in standard EPROM programmers. Each device requires a single 3.0 volt power supply for both read and write functions. In addition to a VCC input, an high-voltage accelerated program (WP / ACC) input provides shorter programming times through increased current. This feature is intended to facilitate factory throughput during system production, but may also be used in the field if desired. The devices are entirely command set compatible with the JEDEC single power-supply Flash standard. Commands are written to the device using standard microprocessor write timing. Write cycles also internally latch addresses and data needed for the programming and erase operations. The sector erase architecture allows memory sectors to be erased and reprogrammed without affecting the data contents of other sectors. The device is fully erased when shipped from the factory. Device programming and erasure are initiated through command sequences. Once a program or erase operation has begun, the host system need only poll the DQ7 (Data# Polling) or DQ6 (toggle) status bits or monitor the Ready / Busy# (RY / BY#) output to determine whether the operation is complete. To facilitate programming, an Unlock Bypass mode reduces command sequence over head by requiring only two write cycles to program data instead of four. The I/O (VIO) control allows the host system to set the voltage levels that the device generates and tolerates on all input levels (address, chip control, and DQ input levels) to the same voltage level that is asserted on the VIO pin. This allows the device to operate in a 1.8 V or 3 V system environment as required. Hardware data protection measures include a low VCC detector that automatically inhibits write operations during power transitions. Persistent Sector Protection provides in-system, comand-enabled protection of any combination of sectors using a single power supply at VCC. Password W764M32V-XSBX ADVANCED* Sector Protection prevents unauthorized write and erase operations in any combination of sectors through a userdefined 64-bit password. The erase Suspend / Erase Resume feature allows the host system to pause and erase operation in a given sector to read or program any other sector and then complete the erase operation. The Program Suspend / Program Resume feature enables the host system to pause the program operation in a given sector to read any other sector and then complete the program operation. The hardware RESET# pin terminates any operation in progress and resets the device, after which it is then ready for a new operation. The RESET# pin may be tied to the system reset circuitry. A system reset would thus also reset the device, enabling the host system to read boot-up firmware from the Flash memory device. The device reduces power consumption in the standby mode when it detects specific voltage levels on CS# and RESET#, or when addresses have been stable for a specified period of time. The Secured Silicon Sector provides a 128-work/256-byte area for code or data that can be permanently protected. Once this sector is protected, no further changes within the sector can occur. The Write Protect (WP# / ACC) feature protects the first or last sector by asserting a logic low on the WP# pin. White Electronic Designs Corp. reserves the right to change products or specifications without notice. March 2006 Rev. 2 2 White Electronic Designs Corporation * (602) 437-1520 * www.wedc.com White Electronic Designs FIG 1: PIN CONFIGURATION (TOP VIEW) 1 2 3 4 5 6 7 8 9 W764M32V-XSBX ADVANCED* PIN DESCRIPTION DQ0-63 A0-24, A-1* WE#0-1 CS#0-1 OE# RESET# WP#/ACC RY/BY# VCC VIO GND DNU Data Inputs/Outputs Address Inputs Write Enables Chip Selects Output Enable Hardware Reset Hardware Write Protection/Acceleration Ready/Busy Output Power Supply I/O Power Supply Ground Do Not Use A B C D E F G H J K L M VI0 VCC DQ24 DQ8 GND A0 A3 VCC GND DQ10 DQ25 DQ9 GND A1 A4 A6 VIO DQ12 DQ27 DQ11 DQ26 GND OE# A5 RY/BY# A7 DQ13 DQ29 DQ28 DNU GND A2 RESET# WP/ACC# A14 DQ14 DQ30 DQ31 VIO GND VIO CS0# WE1# A15 DQ15 GND VIO VCC GND VCC VIO GND A22 DQ0 GND VIO VCC GND VCC VIO GND A23 DQ1 DQ17 DQ16 VIO GND VIO CS1# WE0# A17 * A-1 is the least significant address. DQ18 DQ2 DQ3 DNU GND A19 A20 A21 A18 DQ19 DQ4 DQ20 DQ21 GND A-1 A10 A9 A8 VIO DQ5 DQ6 DQ23 GND A16 A12 A11 VIO BLOCK DIAGRAM GND VCC DQ22 DQ7 GND A24 A13 VCC GND WE0# CS0# RY/BY# RESET# OE# A-1,A0-24 WE1# CS1# 64M X 8 64M X 8 64M X 8 64M X 8 WP#/ACC DQ0-7 DQ8-15 DQ16-23 DQ24-31 White Electronic Designs Corp. reserves the right to change products or specifications without notice. March 2006 Rev. 2 3 White Electronic Designs Corporation * (602) 437-1520 * www.wedc.com White Electronic Designs ABSOLUTE MAXIMUM RATINGS Parameter Operating Temperature Supply Voltage Range (VCC) Signal Voltage Range Storage Temperature Range Endurance (write/erase cycles) -55 to +125 -0.5 to +4.0 -0.5 to Vcc +0.5 -55 to +125 1,000,000 min. Unit C V V C cycles W764M32V-XSBX ADVANCED* CAPACITANCE TA = +25C, F = 1.0MHz Parameter WE1-4# capacitance CS1-4# capacitance Data I/O capacitance Address input capacitance RESET# capacitance RY/BY# capacitance OE# capacitance Symbol CWE CCS CI/O CAD CRS CRB COE Max TBD TBD TBD TBD TBD TBD TBD NOTES: 1. Minimum DC voltage on input or input or I/Os is -0.5V. During voltage transitions, inputs or I/Os may overshoot VSS to -2.0V for periods of up to 20ns. Maximum DC voltage on input or I/Os us VCC + 0.5V. During voltage transitions, input or I/O pins may overshoot to VCC + 2.0V for periods up to 20ns 2. Minimum DC input voltage on pins A9, OE#, and ACC is 0.5V. During voltage transitions, A9, OE#, and ACC may overshoot VSS to -2.0V for periods of up to 20ns. Maximum DC input voltage on pin A9, OE#, and ACC is +12.5V which may overshoot to +14.0V for periods up to 20ns 3. No more than one output may be shorted to ground at a time. Duration of the short circuit should not be greater than one second. 4. Stresses above those listed under Absolute Maxium Ratings may cause permanent damage to the device. This is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational sections of the data sheet is not implied. Exposure of the device to absolute maxium rating conditons for extended peroids may affect device reliability Unit pF pF pF pF pF pF pF This parameter is guaranteed by design but not tested. DATA RETENTION Parameter Pattern Data Retention Time Test Conditions 150C 125C Min 10 20 Unit Years Years RECOMMENDED OPERATING CONDITIONS Parameter Supply Voltage Operating Temp. (Mil.) Operating Temp. (Ind.) Symbol VCC TA TA Min 3.0 -55 -40 Max 3.6 +125 +85 Unit V C C White Electronic Designs Corp. reserves the right to change products or specifications without notice. March 2006 Rev. 2 4 White Electronic Designs Corporation * (602) 437-1520 * www.wedc.com White Electronic Designs DC CHARACTERISTICS - CMOS COMPATIBLE VCC = 3.3V 0.3V, -55C TA +125C Parameter Input Load Current (1) A9 Input Load Current Output Leakage Current Symbol ILI ILIT ILO Conditions VIN = VSS to VCC, #VCC = VCC(MAX) VCC = to VCC(MAX); A9 = 12.5V VOUT = VSS to VCC, # VCC = VCC(MAX) CE# = VIL#, OE# = VIH, VCC = VCC(MAX); # f = 1 MHz, Byte Mode CE# = VIL#, OE# = VIH, VCC = VCC(MAX); # f = 5MHz, Word Mode CE# = VIL#, OE# = VIH, VCC = VCC(MAX); f = 10MHz CE# = VIL#, OE# = VIH, VCC = VCC(MAX) VCC = VCC(MAX); VIO = VCC; OE# = VIH; # VIL = VSS + 0.3V/-0.1V; # CE#, RESET# = VSS 0.3V VCC = VCC(MAX); VIO = VSS + 0.3V/0.1V; RESET# = VSS 0.3V VCC = VCC(MAX); VIO = VCC; VIH = VCC 0.3V; #VIL = VSS + 0.3V/0.1V; WP#/ACC = VIH CE# = VIL, OE# = VIH, VCC = VCC(MAX), #WP#/ACC = VIH WP#/ACC pin VCC pin -0.1 0.7 x VIO VCC = 2.7 - 3.6V VCC = 2.7 - 3.6V IOL = -100 A IOH = -100 A 11.5 11.5 0.85 x VIO 2.3 Min W764M32V-XSBX ADVANCED* Typ Max WP/ACC: 2.0 Others: 1.0 35 1.0 Unit A A A mA mA mA mA A A A 24 120 1 200 4 4 4 40 200 80 200 10 320 20 20 20 80 320 0.3 x VIO VIO + 0.3 12.5 12.5 0.15 x VIO 2.5 VCC Active Current for Read (1) ICC1 VCC Intra-Page Read Current (1) VCC Active Erase/Program Current (2,3) VCC Standby Current VCC Reset Current Automatic Sleep Mode (4) ICC2 ICC3 ICC4 ICC5 ICC6 ACC Accelerated Program Current Input Low Voltage (5) Input High Voltage (5) Voltage for ACC Erase/Program Acceleration Voltage for Autoselect and Temporary Sector Unprotect Output Low Voltage (5) Output High Voltage (5) Low VCC Lock-Out Voltage IACC VIL VIH VHH VID VOL VOH VLKO mA V V V V V V V NOTES: 1. The ICC current is typically less than 2 mA/MHz, with OE# at VIH 2. ICC active while Embedded Erase or Embedded Program or Write Buffer Programming is in progress. 3. Not 100% tested. 4. Automatic sleep mode enables the lower power mode when addresses remain stable for tACC + 30ns. 5. VIO = 1.65-1.95V or 2.7-3.6V. 6. VCC = 3 V and VIO = 3V or 1.8V. When VIO is at 1.8V, I/O pins cannot operate at 3V. White Electronic Designs Corp. reserves the right to change products or specifications without notice. March 2006 Rev. 2 5 White Electronic Designs Corporation * (602) 437-1520 * www.wedc.com White Electronic Designs VCC = 3.3V 0.3V, -55C TA +125C Parameter Write Cycle Time (3) Chip Select Setup Time (3) Write Enable Pulse Width Address Setup Time Data Setup Time Data Hold Time Address Hold Time Write Enable Pulse Width High (3) Duration of Byte Programming Operation (1) Sector Erase (2) Read Recovery Time before Write (3) VCC Setup Time Address Setup Time to OE# low during toggle bit polling Write Recovery Time from RY/BY# (3) Program/Erase Valid to RY/BY# NOTES: 1. Typical value for tWHWH1 is 60 s. 2. Typical value for tWHWH2 is 0.5 sec. 3. Guaranteed by design, but not tested. W764M32V-XSBX ADVANCED* AC CHARACTERISTICS - WRITE/ERASE/PROGRAM OPERATIONS - WE# CONTROLLED Symbol tAVAV tELWL tWLWH tAVWL tDVWH tWHDX tWLAX tWHWL tWHWH1 tWHWH2 tGHWL tVCS tWC tCS tWP tAS tDS tDH tAH tWPH Min 100 0 35 0 45 0 45 30 -100 Max Min 120 0 50 0 50 0 50 30 -120 Max ns ns ns ns ns ns ns ns s sec ns s ns ns ns Unit 500 3.5 0 50 15 0 90 0 50 15 0 90 500 5 tASO tRB tBUSY AC CHARACTERISTICS - READ-ONLY OPERATIONS VCC = 3.3V 0.3V, -55C TA +125C Parameter Read Cycle Time (1) Address Access Time Chip Select Access Time Page Access Time Output Enable to Output Valid Chip Select High to Output High Z Output Enable High to Output High Z Output Hold from Addresses, CS# or OE# Change, Whichever occurs first Output Enable Hold Time (1) Read Toggle and Data# Polling 1. Guaranteed by design, not tested. 6 White Electronic Designs Corporation * (602) 437-1520 * www.wedc.com Symbol Min tAVAV tAVQV tELQV tRC tACC tCE tPACC tGLQV tEHQZ tGHQZ tAXQX tOE tDF tDF tOH tOEH 0 0 10 100 -100 Max 100 100 25 25 20 20 0 0 10 Min 120 -120 Max Unit ns 120 120 30 35 20 20 ns ns ns ns ns ns ns ns ns White Electronic Designs Corp. reserves the right to change products or specifications without notice. March 2006 Rev. 2 White Electronic Designs W764M32V-XSBX ADVANCED* FIGURE 2: AC WAVEFORMS FOR READ OPERATIONS tRC Addresses tACC CS# tDF OE# tOEH WE# tCE tOE Addresses Stable tOH High Z Outputs High Z Output Valid RESET# RY/BY# OV FIGURE 3: PAGE READ TIMING Amax-A2 Same Page A2 -A-1 Aa tACC Ab tPACC Ac tPACC tPACC Ad Data Bus CE# OE# Qa Qb Qc Qd White Electronic Designs Corp. reserves the right to change products or specifications without notice. March 2006 Rev. 2 7 White Electronic Designs Corporation * (602) 437-1520 * www.wedc.com White Electronic Designs W764M32V-XSBX ADVANCED* AC CHARACTERISTICS - HARDWARE RESET (RESET#) Parameter RESET# Pin Low (During Embedded Algorithms) to Read Mode (1) RESET# Pin Low (NOT During Embedded Algorithms) to Read Mode (1) RESET# Pulse Width RESET# High Time Before Read (1) RESET# Low to Standby Mode (1) RY/BY# Recovery Time NOTE: 1. Not tested. Symbol Min tready tready tRP tRH tRPD tRB 500 50 20 0 Max 20 500 Unit s ns ns ns s ns FIGURE 4: RESET TIMINGS NOT DURING EMBEDDED ALGORITHMS RY/BY# CS#, OE# tRH RESET# tRP tReady FIGURE 5: RESET TIMINGS DURING EMBEDDED ALGORITHMS tReady RY/BY# tRB CS#, OE# RESET# tRP White Electronic Designs Corp. reserves the right to change products or specifications without notice. March 2006 Rev. 2 8 White Electronic Designs Corporation * (602) 437-1520 * www.wedc.com tRH White Electronic Designs FIGURE 6: PROGRAM OPERATIONS W764M32V-XSBX ADVANCED* tWC Addresses 555h tAS PA tAH PA PA CS# tCH OE# tWP WE# tCS tWPH tDH tWHWH1 tDS Data A0h PD tBUSY Status DOUT tRB RY/BY# VCC tVCS NOTES: 1. PA is the address of the memory location to be programmed. 2. PD is the data to be programmed at byte address. 3. DOUT is the output of the data written to the device. 4. Figure indicates last two bus cycles of four bus cycle sequence. White Electronic Designs Corp. reserves the right to change products or specifications without notice. March 2006 Rev. 2 9 White Electronic Designs Corporation * (602) 437-1520 * www.wedc.com White Electronic Designs W764M32V-XSBX ADVANCED* FIGURE 7: ACCELERATED PROGRAM TIMING DIAGRAM VHH WP#/ACC VIL or VIH tVHH tVHH VIL or VIH FIGURE 8: CHIP/SECTOR ERASE OPERATION TIMINGS tWC Addresses 2AAh tAS SA 555h for chip erase VA tAH VA CS# OE# tWP WE# tCS tDS tCH tWPH tDH tWHWH2 30h 10 for Chip Erase Data 55h In Progress tBUSY Complete tRB RY/BY# tVCS VCC NOTES: 1. SA = Sector Address (for Sector Erase), VA = Valid Address for reading status data White Electronic Designs Corp. reserves the right to change products or specifications without notice. March 2006 Rev. 2 10 White Electronic Designs Corporation * (602) 437-1520 * www.wedc.com White Electronic Designs W764M32V-XSBX ADVANCED* FIGURE 9: DATA POLLING TIMINGS (DURING EMBEDDED ALGORITHMS) tRC Addresses VA tACC tCE tCH OE# tOEH WE# tOH DQ7 Complement Complement True Valid Data High Z tDF tOE VA VA CS# DQ0-DQ6 tBUSY RY/BY# Status Data Status Data True Valid Data High Z NOTE: VA = Valid address. Illustration shows first status cycle after command sequence, last status read cycle, and array data read cycle. White Electronic Designs Corp. reserves the right to change products or specifications without notice. March 2006 Rev. 2 11 White Electronic Designs Corporation * (602) 437-1520 * www.wedc.com White Electronic Designs W764M32V-XSBX ADVANCED* FIGURE 10: TOGGLE BIT TIMINGS (DURING EMBEDDED ALGORITHMS) tAHT Addresses tAS tAHT tASO CS# tOEH WE# tOEPH OE# tDH DQ6/DQ2 Valid Data Valid Status (First Read) RY/BY# tOE Valid Status (Second Read) Valid Status (Stops Toggling) Valid Data tCEPH NOTE: VA = Valid address, not required for DQ6. Illustration shows first two status cycle after command sequence, last status read cycle, and array data read cycle. FIGURE 11: DQ2 Vs. DQ6 Enter Embedded Erasing Erase Suspend Erase Enter Erase Suspend Program Erase Suspend Program Erase Resume Erase Suspend Read Erase Erase Complete WE# Erase Suspend Read DQ6 DQ2 NOTE: DQ2 toggles only when read at an address within an erase-suspended sector. The system may use OE# or CS# to toggle DQ2 and DQ6. White Electronic Designs Corp. reserves the right to change products or specifications without notice. March 2006 Rev. 2 12 White Electronic Designs Corporation * (602) 437-1520 * www.wedc.com White Electronic Designs W764M32V-XSBX ADVANCED* AC CHARACTERISTICS - ALTERNATE CS# CONTROLLED ERASE AND PROGRAM OPERATIONS Parameter JEDEC tAVAV tAVWL tELAX tDVEH tEHDX tGHEL tWLEL tEHWH tELEH tEHEL tWHWH1 tWHWH1 tWHWH2 Std tWC tAS tAH tDS tDH tGHEL TWS tWH tCP tCPH tWHWH1 tWHWH1 tWHWH2 Description Write Cycle Time (1) Address Setup Time Address Hold Time Data Setup Time Data Hold Time Read Recovery Time Before Write (OE# High to WE# Low) WE# Setup Time WE# Hold Time CS# Pulse Width CS# Pulse Width High Programming Operation Accelerated Programming Operation Sector Erase Operation Min Min Min Min Min Min Min Min Min Min Typ Typ Typ Speed Options 100 100 0 45 45 0 0 0 0 35 30 60 54 0.5 120 120 0 50 50 0 0 0 0 35 30 6 54 05 Unit ns ns ns ns ns ns ns ns ns ns s s sec NOTE: 1. Not tested. White Electronic Designs Corp. reserves the right to change products or specifications without notice. March 2006 Rev. 2 13 White Electronic Designs Corporation * (602) 437-1520 * www.wedc.com White Electronic Designs W764M32V-XSBX ADVANCED* FIGURE 12: ALTERNATE CS# CONTROLLED WRITE (ERASE/PROGRAM) OPERATION TIMINGS 555 for Program 2AA for Erase PA for Program SA for Sector Erase 555 for Chip Erase Data# Polling Addresses tWC tWH WE# tGHEL OE# tCP CS# tWS tDS tDH Data tHR A0 for Program 55 for Erase PD for Program 30 for Sector Erase 10 for Chip Erase PA tAS tAH tWHWH1 OR 2 tCPH tBUSY DQ7# DOUT RESET# RY/BY# NOTES: 1. Figure indicates last two bus cycles of a program or erase operation. 2. PA = program address, SA = sector address, PD = program data. 3. DQ7 is the complement of the data written to the device. DOUT is the data written to the device. White Electronic Designs Corp. reserves the right to change products or specifications without notice. March 2006 Rev. 2 14 White Electronic Designs Corporation * (602) 437-1520 * www.wedc.com White Electronic Designs W764M32V-XSBX ADVANCED* PACKAGE: 107 PBGA (PLASTIC BALL GRID ARRAY) BOTTOM VIEW 107 X 0.60 (0.024)NOM 987654321 A B C D E F G H J K L M 1.00 (0.039)NOM 8.00 (0.315) NOM 11.00 (0.433) NOM 17.10 (0.673) MAX 1.00 (0.039) NOM 14.10 (0.555) MAX 0.50 (0.020) NOM 2.32 (0.091) MAX ALL LINEAR DIMENSIONS ARE IN MILLIMETERS AND PARENTHETICALLY IN INCHES ORDERING INFORMATION W 7 64M32 V XXX SB X White Eletronic Designs Corp. Flash: Organization, 64M x 32: 3.3V Power Supply: Access Time (ns): 100 = 100ns 120 = 120ns ES = Non-qualified product 1 Package Type: SB = 107 PBGA, 14mm x 17mm Devise Grade: M = Military -55C to +125C I = Industrial -40C to +85C C = Commercial 0C to +70C Blank = No temperature range specified for non-qualified product NOTE 1: W764M32V-ESSB is only available product until completion of qualification. White Electronic Designs Corp. reserves the right to change products or specifications without notice. March 2006 Rev. 2 15 White Electronic Designs Corporation * (602) 437-1520 * www.wedc.com White Electronic Designs Document Title 64Mx32 Flash 3.3V W764M32V-XSBX ADVANCED* Revision History Rev # Rev 0 Rev 1 History Initial Release Changes (All Pages) 1.1 Add AC + DC characteristics and timing diagrams 1.2 Update package dimensions 1.3 Add preliminary pinout Release Date November 2005 February 2006 Status Advanced Advanced Rev 2 Changes (Pg. 1, 3, 16) 2.1 Correct typographical error in pinout on page 3, ball 'B4' is DQ9 March 2006 Advanced White Electronic Designs Corp. reserves the right to change products or specifications without notice. March 2006 Rev. 2 16 White Electronic Designs Corporation * (602) 437-1520 * www.wedc.com |
Price & Availability of W764M32V120SB
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |